inchange semiconductor product specification silicon npn power transistors 2N6308 description with to-3 package high breakdown voltage high power dissipation applications designed for high voltage inverters, switching regulators,li ne operated amplifiers, and switching power supplies applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 700 v v ceo collector-emitter voltage open base 350 v v ebo emitter-base voltage open collector 8 v i c collector current 8 a i b base current 4 a p t total power dissipation t c =25 125 w t j junction temperature 200 t stg storage temperature -65~200 fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N6308 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 350 v v cesat-1 collector-emitter saturation voltage i c =3a; i b =0.6a 1.5 v v cesat-2 collector-emitter saturation voltage i c =8a; i b =2.67a 5.0 v v besat base-emitter saturation voltage i c =8a; i b =2.67a 2.5 v v be base-emitter on voltage i c =3a ; v ce =5v 1.5 v i cev collector cut-off current v ce =700v; v be =-1.5v 0.5 ma i ceo collector cut-off current v ce =350v; i b =0 0.5 ma i ebo emitter cut-off current v eb =8v; i c =0 1.0 ma h fe-1 dc current gain i c =3a ; v ce =5v 12 60 h fe -2 dc current gain i c =8a ; v ce =5v 3 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 250 pf f t transition frequency i c =0.3a ; v ce =10v;f=1mhz 5 mhz switching times t r rise time 0.6 s t s storage time 1.6 s t f fall time v cc =125v; i c =3.0a; i b =0.6a 0.4 s
inchange semiconductor product specification 3 silicon npn power transistors 2N6308 package outline fig.2 outline dimensions
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